The P- & N-type power MOSFETs from Jin-Power Technology are designed with either deep or split-gate trench structure. Their V_DS cover from -20V to 200V and I _DS go as high as 330A. The silicon dies inside these devices were manufactured on state-of-the-art 8" and 12" wafers which are ISO / QC / UL / IATF certified. The packages used to assemble these devices vary from the low-profile SOT23-3 @ 2.9mm x 2.4mm large to TOLL # 12mm x 7mm large. The packages which are used to house these power MOSFET devices are lead-free packages and are manufactured with the RoHS-compliant molding compounds. Depending on the values of key electrical parameters like { R _DS(ON) , Q _g , C _iss , C _oss , V _GS(th ), E _AS }, these devices are good for low-to-high power applications like load / power switches and motor driving in end-systems such as communication hubs, PCs & servers, power supplies, adapters & chargers, all sort of vehicles, consumer electronics, robotics, industrial equipments etc.